Engineering

4+ years of collective professional experience in wireless power, radio frequency and semiconductor technologies.

Hardware Automation

Automated data acquisition and post processing.

Tools

PCB Design

Materializing sustainable designs – responsive to incoming technological advances, resistant to inventory shortages, and adaptable to component obsolescence.

Tools

Software

2D / 3D CAD

Chassis, fixtures and engineering drawings – modeling with dimensional fidelity, material compatibility, and adherence to fabrication requirements.

Tools

Software

Simulation

Proving the future – realistic emulators for technology products and pre-production concepts.

Tools

Test Engineering / Electronics Repair

Validating product reliability and ensuring resilient restorations.

Tools

Hardware

Education

Alma Mater

Kennesaw State University

Physics B.S. with a concentration in Electrical Engineering 

2023

Professional Experience

0 Years
Academic Research in Semiconductor Materials
0 Months
Test Engineering in Radio Frequency
0 Months
Design Engineering in Wireless Power

Industries

Featured Publications

Effects of Gadolinium Precursors on the Magnetic Properties of Gadolinium-doped Gallium Nitride for Spintronic Applications (5 March 2022)

Vishal Saravade, Austin Crawford, Jahne Williams, Chuanle Zhou, Na Lu, Benjamin Klein, Ian Ferguson
SPIE OPTO, Proceedings Volume 12009, Quantum Sensing and Nano Electronics and Photonics XVIII

Abstract: The role of metal-organic precursors specifically gadolinium precursors on the resulting magnetic properties of gadolinium-doped gallium nitride (GaGdN) is investigated. Gadolinium-doping is expected to render spin-related magnetic properties in GaN for spintronic applications. To achieve and understand this, GaGdN was grown using metalorganic chemical vapor deposition using two types of gadolinium precursors - tris (2,2,6,6-tetramethyl-3,5- heptanedionate) gadolinium ((TMHD)3Gd) and tris(cyclopentadienyl) gadolinium (Cp3Gd). GaGdN grown using (TMHD)3Gd showed Anomalous Hall Effect and ferromagnetism at room temperature (RT). GaGdN grown using Cp3Gd showed ordinary Hall Effect with no signs of ferromagnetism or any spin polarization. Oxygen from (TMHD)3Gd incorporated in GaGdN during the MOCVD growth could be responsible for the differences in magnetic properties. GaGdN shows properties at RT that are conducive for spintronic applications. However, metal-organic precursors and corresponding presence of oxygen significantly influence the spin-related capabilities of GaGdN. This work contributes towards understanding the mechanisms for spin-related properties of GaGdN that can enable its RT spintronic applications.

Substantiating Ferromagnetism in Boron-Carbide-and-Manganese-Doped Gallium Nitride for Room Temperature Spintronics Applications (under review for publication, 2024)

Jahne Williams, Vishal Saravade, Benjamin Klein, Ian Ferguson, Zhe Chuan Feng, Manika Tun Nafisa, Mounika Ramichetty, Ikram Talukder

Abstract: The objective of this study is to observe the anomalous Hall effect (AHE) in room-temperature gallium nitride doped with boron carbide and manganese (B4CMnGaN) in order to substantiate the ferromagnetic nature of B4CMnGaN. Evidence of ferromagnetism in B4CMnGaN was found by measuring the electrical resistance response of a B4CMnGaN sample as a function of a sweeping magnetic field: eventual resistance saturation, indicative of magnetic domain alignment in the B4CMnGaN, and resistance hysteresis due to the magnetic field. These results indicating strong intrinsic magnetic interactions in B4CMnGaN provide motivation for further investigation of the use of B4CMnGaN in room temperature spintronics.