Automated data acquisition and post processing.
Professional lab reports, PowerPoint presentations and graphs.
Materializing sustainable designs – responsive to incoming technological advances, resistant to inventory shortages, and adaptable to component obsolescence.
Chassis, fixtures and engineering drawings – modeling with dimensional fidelity, material compatibility, and adherence to fabrication requirements.
Proving the future – realistic emulators for technology products and pre-production concepts.
Validating product reliability and ensuring resilient restorations.
Physics B.S. with a concentration in Electrical Engineering
2023
Vishal Saravade, Austin Crawford, Jahne Williams, Chuanle Zhou, Na Lu, Benjamin Klein, Ian Ferguson
SPIE OPTO, Proceedings Volume 12009, Quantum Sensing and Nano Electronics and Photonics XVIII
Abstract: The role of metal-organic precursors specifically gadolinium precursors on the resulting magnetic properties of gadolinium-doped gallium nitride (GaGdN) is investigated. Gadolinium-doping is expected to render spin-related magnetic properties in GaN for spintronic applications. To achieve and understand this, GaGdN was grown using metalorganic chemical vapor deposition using two types of gadolinium precursors - tris (2,2,6,6-tetramethyl-3,5- heptanedionate) gadolinium ((TMHD)3Gd) and tris(cyclopentadienyl) gadolinium (Cp3Gd). GaGdN grown using (TMHD)3Gd showed Anomalous Hall Effect and ferromagnetism at room temperature (RT). GaGdN grown using Cp3Gd showed ordinary Hall Effect with no signs of ferromagnetism or any spin polarization. Oxygen from (TMHD)3Gd incorporated in GaGdN during the MOCVD growth could be responsible for the differences in magnetic properties. GaGdN shows properties at RT that are conducive for spintronic applications. However, metal-organic precursors and corresponding presence of oxygen significantly influence the spin-related capabilities of GaGdN. This work contributes towards understanding the mechanisms for spin-related properties of GaGdN that can enable its RT spintronic applications.
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Jahne Williams, Vishal Saravade, Benjamin Klein, Ian Ferguson, Zhe Chuan Feng, Manika Tun Nafisa, Mounika Ramichetty, Ikram Talukder
Abstract: The objective of this study is to observe the anomalous Hall effect (AHE) in room-temperature gallium nitride doped with boron carbide and manganese (B4CMnGaN) in order to substantiate the ferromagnetic nature of B4CMnGaN. Evidence of ferromagnetism in B4CMnGaN was found by measuring the electrical resistance response of a B4CMnGaN sample as a function of a sweeping magnetic field: eventual resistance saturation, indicative of magnetic domain alignment in the B4CMnGaN, and resistance hysteresis due to the magnetic field. These results indicating strong intrinsic magnetic interactions in B4CMnGaN provide motivation for further investigation of the use of B4CMnGaN in room temperature spintronics.